Simulation of Carbon Nanotube based Field Effect Transistor by Varying Gate Oxide Thickness to Explore its Electrical Property and Compare it with Standard Mosfet

Authors

  • Morupuri Satish Kumar Reddy
  • Dr.A. Deepak

DOI:

https://doi.org/10.47059/revistageintec.v11i2.1780

Abstract

Aim: The current and voltage characteristics of CNTFET and MOSFET are simulated by varying their gate oxide thickness ranging from 3.5nm to 11.5nm. Materials and Methods: The electrical conductance of CNTFET (n = 320) was compared with MOSFET (n = 320) by varying gate oxide thickness ranging from 3.5nm to 11.5nm in the NanoHUB© tool simulation environment. Results: CNTFET has significantly higher conductance (12.52 mho) than MOSFET (12.07 mho). The optimal thickness for maximum conductivity was 4nm for CNTFET and 3.5 nm for MOSFET. Conclusion: Within the limits of this study, CNTFET with the gate oxide thickness of 4 nm offers the best conductivity.

Downloads

Published

2021-06-04

Issue

Section

Articles