Simulation of Carbon Nanotube based Field Effect Transistor by Varying Gate Oxide Thickness to Explore its Electrical Property and Compare it with Standard Mosfet
Aim: The current and voltage characteristics of CNTFET and MOSFET are simulated by varying
their gate oxide thickness ranging from 3.5nm to 11.5nm. Materials and Methods: The electrical
conductance of CNTFET (n = 320) was compared with MOSFET (n = 320) by varying gate oxide
thickness ranging from 3.5nm to 11.5nm in the NanoHUB© tool simulation environment.
Results: CNTFET has significantly higher conductance (12.52 mho) than MOSFET (12.07 mho).
The optimal thickness for maximum conductivity was 4nm for CNTFET and 3.5 nm for MOSFET.
Conclusion: Within the limits of this study, CNTFET with the gate oxide thickness of 4 nm offers the