Volume 11 - Volume 11
Simulation and Comparison of Current Voltage Characteristics of Si and Ge based Bio Field Effect Transistor by Varying Oxide Thickness to Get Better Sensitivity
Abstract
Aim: The current voltage characteristics of Silicon based BIOFET and Germanium based BIOFET
are simulated by varying their oxide thickness ranging from 1nm to 100nm.
Materials and Methods: The electrical conductance of Silicon based BIOFET (n=320) was
compared with Germanium based BIOFET (n=320) by varying oxide thickness ranging from 1nm to
100nm in the NanoHub© tool simulation environment. Results: Germanium based BIOFET has
significantly higher conductance than Silicon based BIOFET. The optimal gate oxide thickness for
maximum conductivity was 1nm for Silicon based BIOFET and 35nm for Germanium based
BIOFET. Conclusion: Within the limits of the study, Germanium based BIOFET with oxide
thickness of 35nm offers the best conductivity.
Paper Details
PaperID: 1737
Author's Name: S. Layasree and Dr.A. Deepak
Volume: Volume 11
Issues: Volume 11
Keywords: BIOFET, Silicon, Germanium, Oxide Thickness, Novel BioFET, NanoHub Simulation Tool, Nanotechnology, Conductance.
Year: 2021
Month: April
Pages: 1066-1083